1980-07-24
1983-09-13
Davie, James W.
357 30, 357 58, 357 90, H01L 2974, H01L 2914, H01L 2912
Patent
active
044045808
ABSTRACT:
A light activated thyristor with high dv/dt capability is provided by disposing first and second thyristors, one a primary and the other a pilot thyristor, in a semiconductor body having first and second major surface. The two thyristors have common first emitter, first base, and second base regions, and have spaced apart second emitter regions adjoining the second major surface of the body. The second emitter region of the second thyristor consists of first and second portions, first portion abutting the second base region of the second thyristor to create a ratarded electrical field. An exposed portion of the second major surface at the second emitter region of the second thyristor activates the second thyristor when electromagnetic radiation of wavelengths corresponding substantially to the energy bandgap of the semiconductor body strikes this exposed portion. The cathode electrode makes ohmic contact with the second emitter region of the first thyristor, and the anode electrode makes ohmic contact with the common first emitter regions. A floating contact also makes ohmic contact to the second emitter region of the second thyristor and the common second base region between the thyristors.
REFERENCES:
patent: 3893153 (1975-07-01), Page et al.
patent: 3945028 (1976-03-01), Krishna et al.
Konishi Nobutake
Naito Masayoshi
Terasawa Yoshio
Yatsuo Tsutomu
Carroll J.
Davie James W.
Hitachi , Ltd.
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