Electrostatic discharge protection circuit

Details Electrostatic discharge protection circuit Electrostatic discharge protection circuit

1996-11-12

1998-06-16

Gaffin, Jeffrey A.

Electricity: electrical systems and devices

Safety and protection of systems and devices

Load shunting by fault responsive means

361111, 361118, H02H 900

Patent

active

057680787

ABSTRACT:
An electrostatic discharge protection circuit comprising a first transistor formed on a semiconductor substrate adjacently to one side of an insulation oxide film region, for transferring a voltage from a first voltage terminal to an output terminal in response to a first input signal, a second transistor formed on the semiconductor substrate adjacently to the other side of the insulation oxide film region, for transferring a voltage form a second input signal, and an NPN transistor having its collector connected to the first voltage terminal, its emitter connected to the output terminal and its base connected to a bulk region of the second transistor. According to the present invention, when a semiconductor device is exposed to electrostatic discharge, the electrostatic discharge protection circuit discharges charges introduced by the electrostatic discharge before they are discharge through an internal circuitry. Therefore, due to the electrostatic discharge, the internal circuitry can be prevented from being damaged.

REFERENCES:
patent: 4760433 (1988-07-01), Young et al.
patent: 4990802 (1991-02-01), Smooha
patent: 5041894 (1991-08-01), Reczek
patent: 5381056 (1995-01-01), Murphy
patent: 5455543 (1995-10-01), Cheng
patent: 5546020 (1996-08-01), Lee et al.

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