Process for depositing a III-V compound layer on a substrate

Details Process for depositing a III-V compound layer on a substrate Process for depositing a III-V compound layer on a substrate

1987-06-16

1989-05-23

Bell, Janyce

Fishing, trapping, and vermin destroying

427108, 427110, 427123, 427226, 427229, 437234, 437245, B05D 512

Patent

active

048331031

ABSTRACT:
A process comprising applying to a substrate a thin film comprised of a liquid carrier and a precursor selected from among compounds in which one or more pairs of group III and V elements are each joined by a thermally stable bond and the group III and V elements are each substituted with two thermally volatilizable ligands. The precursor is heated to a temperature in excess of 200.degree. C. to remove its volatilizable ligands while leaving a ligand free III-V compound as a monophasic layer on the substrate.

REFERENCES:
patent: 3802967 (1974-04-01), Ladany et al.
patent: 3877982 (1975-04-01), Coldren
patent: 4250205 (1981-02-01), Constant et al.
patent: 4427714 (1984-01-01), Davey
patent: 4510182 (1985-04-01), Cornils
patent: 4594264 (1986-06-01), Jensen
Zaouk et al., "Various Chemical Mechanisms for the Crystal Growth of III-V Semiconductors Using Coordination Compounds as Starting Material in the MOCVD Process", Journal of Crystal Growth, vol. 55, 1981, pp. 135-144.
Maury et al., "Raman Spectroscopy Characterization of Polycrystalline GaP Thin Films Grown by MO-CVD Process Using [Et.sub.2 Ga-PEt.sub.2 ].sub.3 as Only Source", Journal de Physique, Colloque C1, Suppl. No. 10, vol. 43, Oct. 1982, pp. C1-347 to C1-252.

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