Method of producing single crystal thin film

Details Method of producing single crystal thin film Method of producing single crystal thin film

1996-05-29

1998-12-08

Garrett, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117 89, 117 93, 117 99, 117105, C30B 2514

Patent

active

058463216

ABSTRACT:
A method of growing a single crystal thin film characterized by heating a silicon single crystal substrate placed in a reactor vessel, then while the temperature of the silicon single crystal substrate is 850.degree. C. or below, introducing a mixed gas composed of hydrogen fluoride gas and hydrogen gas into the reactor vessel for removing a native oxide film on a main surface of the silicon single crystal substrate in an ambient of hydrogen gas; and thereafter, growing a single crystal thin film by a vapor phase epitaxy on said main surface free from the native oxide film at a temperature of 1,000.degree. C. or below. With this method, both evaporation of a dopant caused by outdiffusion and autodoping can be suppressed with a substantial reduction of the processing time.

REFERENCES:
patent: 5023750 (1991-06-01), Hiragama
patent: 5030319 (1991-07-01), Nishino et al.
patent: 5360768 (1994-11-01), Ohmi et al.
patent: 5403434 (1995-04-01), Moslehi
"Dichlorosilane Effects on Low-Temperature Selective Silicon Epitaxy", Lou et al, Applied Physics Letters, vol. 58, No. 1, Jan. 17, 1991, pp. 59-61.
"Low-Temperature Native Oxide Removal From Silicon Using Nitrogen Trifluoride Prior to Low-Temperature Silicon Epitaxy", Burns, Applied Physics Letters, vol. 53, No. 15, Oct. 10, 1988, pp. 1423-1425.
Extended Abstracts, vol. 91-1, pp. 573-574 Apte et al, "Low Temperature, in-situ native oxide removal using Anhydrous Hydrogen Fluoride" Spring Meeting, Washington DC -May 5-10, 1991.

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