Field effect transistor

Details Field effect transistor Field effect transistor

1989-01-23

1993-08-10

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

With means to prevent contact from penetrating shallow pn...

257279, 257281, 257289, 257769, 257773, H01L 2348

Patent

active

052352102

ABSTRACT:
An SB FET comprising source and drain regions formed in the surface of a gallium arsenide (GaAs) substrate, and a channel region formed between the source and drain regions. The gate electrode of the SB FET is formed on the channel region in Schottky contact therewith. The SB FET further comprises source and drain electrodes which are mounted on the source and drain regions in ohmic contact therewith, while being separated from each other at a greater distance than the length of the channel region.

REFERENCES:
patent: 4310570 (1982-01-01), Calviello
patent: 4375643 (1983-03-01), Yeh et al.
patent: 4393578 (1983-07-01), Cady et al.
patent: 4397075 (1983-09-01), Fatula et al.
Translation of the portion of Japanese Patent (Kokoku) No. 58-53516 describing FIGS. 2 to 4.

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