Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – With pn junction isolation
Patent
1994-07-21
1997-05-20
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
With pn junction isolation
257356, 257603, H01L 2900
Patent
active
056314930
ABSTRACT:
A monolithic component incorporates a protection diode in parallel with a plurality of pairs of diodes having the same polarity. The monolithic component is formed from an N-type semiconductor substrate and includes P-type first regions that are formed at the upper surface of the substrate; second regions constituted by upper portions of the substrate, whose lateral surfaces are delineated by P-type insulating walls; a P-type third region at the bottom of the second regions; a fourth P.sup.+ -type region formed from the lower surface in the third region; a fifth N+-type region on the lower surface of the substrate; first metallizations connecting each of the first regions to each of the second regions; and a second metallization on at least one portion of the insulating wall.
REFERENCES:
patent: 3617864 (1971-11-01), Senger
patent: 4831423 (1989-05-01), Shannon
patent: 5338964 (1994-08-01), Bernier
Patent Abstracts Of Japan, vol. 12, No. 24 (E-576) Jan. 23, 1988 & JP-A-62 179 756.
Driscoll David M.
Morris James H.
Prenty Mark V.
SGS-Thomson Microelectronics S.A.
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