Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1995-06-21
1997-05-20
Tran, Minh-Loan
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 72, 257292, 257446, 257448, 257758, H01L 2904, H01L 31062
Patent
active
056314736
ABSTRACT:
A solid state array device includes a plurality of pixels with associated respective TFT switching transistors; a plurality of first address lines disposed in a first layer of the array device; a plurality of second conductive address lines disposed in a second layer of the array device, respective ones of said first and second address lines being disposed substantially perpendicular to one another in a matrix arrangement such that respective ones of the second address lines overlie respective ones of the first address lines at respective crossover regions; a TFT gate dielectric layer disposed in a channel region of each of the pixel TFTs and further being disposed over the first address lines; and a crossover region supplemental dielectric layer disposed in respective ones of the crossover regions between the first and second address lines, but disposed so as to not extend over the TFT channel regions.
REFERENCES:
patent: 4688896 (1987-08-01), Castleberry
patent: 4804953 (1989-02-01), Casteleberry
patent: 5062690 (1991-11-01), Whetten
patent: 5303074 (1994-04-01), Salisbury
patent: 5486939 (1996-01-01), Fulks
Application entitled, "Repair Line Structure for Thin Film Electronic Devices," Ser. No.-08/169,290, filed Dec. 20, 1993; now U.S. Pat. No. 5,475,246; Wei et al.; issue date Dec. 1995.
Application entitled, "Address Line Repair Structure and Method for Thin Film Imager Devices," Ser. No. 08/436,681, May 8, 1995; now U.S. Pat. No. 5,480,812; Salisbury; issue date Jan. 1996.
Application entitled, "Method of Isolating Vertical Shorts in an Electronic Array," Ser. No. 08/115,082, Sep. 2, 1993, now U.S. Pat. No. 5,518,956; Liu et al.; issue May 1996.
Application entitled, "Method of Locating Common Electrode Shorts in an Imager Assembly," Ser. No. 08/161,037, filed Dec. 3, 1993, now U.S. Pat. No. 5,463,322; Kwasnick et al., issue date Oct. 1995.
Application entitled, "Post-Fabrication Repair Structure and Method for Thin Film Imager Devices," Ser. No. 08/280,970, Jul. 27, 1994, pending.
Kwasnick Robert F.
Possin George E.
Salisbury Roger S.
General Electric Company
Ingraham Donald S.
Tran Minh-Loan
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