Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Patent
1995-07-07
1998-06-16
Breneman, R. Bruce
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
438633, 252 791, 106 3, 51308, H01L 21461
Patent
active
057670161
ABSTRACT:
In forming a wiring layer on a semiconductor stepped substrate (wafer) 15, the wiring layer is polished by using a slurry 12 which contains polishing particles treated in advance with a surface treatment agent containing at least an amino group. During polishing, a uniformity of polishing of the surface of the wafer 15 is maintained by rotating a wafer carrier rotation shaft 17 and a platen rotation shaft 14 while supplying slurry 12 through a guide tube 11. Consequently, scratches are prevented from being caused on surfaces of a multilayer wiring layer and an interlayer insulation film on a semiconductor device and, in addition, the wiring layer can be stably polished.
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Toshihiko Oguchi, "Electrification of Metal Oxide Powder", 1985, Surface Magazine, vol. 23, No. 5.
Alanko Anita
Breneman R. Bruce
Kananen Ronald P.
Sony Corporation
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