Photo-assisted remote plasma apparatus and method

Details Photo-assisted remote plasma apparatus and method Photo-assisted remote plasma apparatus and method

2000-03-13

2000-11-28

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

156345, 216 66, 216 67, 427582, 427584, 438709, 438712, 438727, 438730, 438758, H01L 2100

Patent

active

06153529&

ABSTRACT:
The present invention provides a plasma processing system comprising a remote plasma activation region for formation of active gas species, a transparent transfer tube coupled between the remote activation region and a semiconductor processing chamber, and a source of photo energy for maintaining activation of the active species during transfer from the remote plasma activation region to the processing chamber. The source of photo energy preferably includes an array of UV lamps. Additional UV lamps may also be used to further sustain active species and assist plasma processes by providing additional in-situ energy through a transparent window of the processing chamber.

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patent: 5662770 (1997-09-01), Donohoe

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