Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1989-06-28

1990-07-10

Sikes, William L.

Coherent light generators

Particular active media

Semiconductor

357 4, 357 16, 357 17, 372 46, H01S 319

Patent

active

049411462

ABSTRACT:
A semiconductor laser device comprises an active layer of a refractive index n.sub.1, first and second inner cladding layers of a refractive index n.sub.2 and a bandgap energy greater than that of the active layer provided on the both sides of the active layer to form a double heterostructure, and fist and second outer cladding layers of a refractive index n.sub.3 provided on the both sides of the double heterostructure. The refractive indices n.sub.1, n.sub.2 and n.sub.3 meet a relation of "n.sub.1 >n.sub.3 >n.sub.2 ", so that a vertical radiation angle of an output light beam is controlled in accordance with a thickness of the first and second inner cladding layers, and the refractive index n.sub.3, even if the active layer is thick.

REFERENCES:
M. B. Panish et al., "Reduction of Threshold Current . . . Carrier Confinement", Appl. Phys. Lett., vol. 22, No. 11, Jun. 1, 1973, pp. 590-591.

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