Thinning of imaging device processed wafers

Fishing – trapping – and vermin destroying

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437 3, 437 53, 437225, 437974, 437231, 148DIG12, H01L 21302

Patent

active

052348601

ABSTRACT:
A process for supporting an image sensor wafer includes providing a support oxide layer on one surface of a support wafer and an etch resistant layer on the opposite surface. The support oxide layer is bonded to the image sensor oxide layer.

REFERENCES:
patent: 4266334 (1981-05-01), Edwards et al.
patent: 4321613 (1982-03-01), Hughes et al.
patent: 4472875 (1984-09-01), Christian et al.
patent: 4599792 (1986-07-01), Cade et al.
patent: 4608749 (1986-09-01), Harada et al.
patent: 4772565 (1988-09-01), Kamimura et al.
patent: 4784970 (1988-11-01), Solomon
patent: 4840918 (1989-06-01), Sheu et al.
patent: 4879258 (1989-11-01), Fisher
patent: 4962063 (1990-10-01), Maydan et al.
patent: 4968628 (1990-11-01), Delgado et al.
patent: 4980308 (1990-12-01), Hayashi et al.
patent: 4983251 (1991-01-01), Haisma et al.
Huang et al; A new process for thinned, back-illuminated CCD imager devices; 1989; pp. 98-101; International Symposium on VLSI Tech. and Applications.
Lasky, Applied Physics Letters 48(1) (1986); pp. 78-80; Wafer bonding for silicon on insulator technologies.
Shimbo et al, J. Applied Physics 60(8) 1986; pp. 2987-2989; Silicon to Silicon direct bonding method.
Masazara et al, J. Applied Physics 64(10) 1988; pp. 4943-4950; Bonding of Silicon Wafers on Silicon on insulator.
Baumagart et al., 177th Electrochemical Society Mtg. 90-1, 460-461 (1990); Origin of Residual Defects in bonding and etch back silicon on insulator technology.
Ito et al. J. Electrochemical Society, vol. 137 No. 4, (1990); pp. 1212-1218; Application of surface reformed thick SOG to MOS device planarization.
VMIC Conference Jun. 12-13, 1990, p. 89; Renteln et al. pp. 57-63; Characterization of Mechanical Planarization Process.
Marks et al, VMIC Conference, Jun. 12-13, 1989, pp. 89-95; In Situ planarization of dielectric surfaces using boron oxide.
Davari et al; IEDM Technical Digest (1989); pp. 61-64; A new planarization tech. using a combination of RIE and CMP.

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