Method for fabricating lateral resonant tunneling transistor wit

Details Method for fabricating lateral resonant tunneling transistor wit Method for fabricating lateral resonant tunneling transistor wit

1991-11-05

1993-08-10

Quach, T. N.

Fishing, trapping, and vermin destroying

437126, 437133, 437203, H01L 21302

Patent

active

052348482

ABSTRACT:
A lateral resonant tunneling transistor is provided comprising heterojunction barriers (24) and a quantized region (33). Current between source contact (26) and drain contact (28) can be switched "ON" or "OFF" by placing an appropriate voltage on gate contacts (30) and (32). The potential on gate contacts (30) and (32) selectively modulate the quantum states within quantized region (33) so as to allow electrons to tunnel through heterojunction barrier (24) and quantized region (33). The method for fabricating comprises etching trenches through second barrier layer (20) and quantum layer (76) and regrowing a semiconductor to form heterojunction barrier (24).

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