Silicon electrodeposition

Chemistry: electrical and wave energy – Processes and products

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204 59R, C25D 302

Patent

active

039909530

ABSTRACT:
Elemental silicon of utility as a corrosion resistant coating, as an absorber in a solar thermal conversion system, etc. is provided by nonaqueous electrolytic deposition thereof on a cathode body through electrolytic reduction of a silicon halide or haloid silane compound as a solute in a liquid aprotic dipolar organic solvent for the compound by passing therethrough an electrolyzing current, generally at near ambient temperature and near atmospheric pressure yet under cover of an inert gas, and desirably by pulse electrolysis. The electroplating composition consists essentially of a nonaqueous solvent solution of the anhydrous liquid aprotic dipolar organic solvent, for example propylene carbonate, dimethylformamide, etc., containing the silicon solute, such as illustrated by silicon tetrachloride and trichlorosilane, in an amount providing, or providing by inclusion therewith of a dissociable electrolyte (e.g. tetrabutylammonium perchlorate), an electrical conductivity, generally greater than one m Mho, requisite to reduce the silicon solute.

REFERENCES:
patent: 3022233 (1962-02-01), Olstowski
patent: 3131134 (1964-04-01), Micillo
patent: 3580828 (1971-05-01), Reddy
patent: 3595760 (1971-07-01), Ishibashi
patent: 3616280 (1971-10-01), Arnold
G. Szekely, Electrodeposition of Germanium, J. Electro Chem. Soc. 98, 1951, pp. 318-324.

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