Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

1980-05-22

1983-09-13

Ozaki, G.

Metal working

Plural diverse manufacturing apparatus including means for...

Common reciprocating support for spaced tools

29578, 29591, 29571, 148187, 148188, H01L 21225

Patent

active

044033923

ABSTRACT:
A method for manufacturing a semiconductor device having a high breakdown voltage and a high reliability, comprises (a) forming on a semiconductor substrate an insulating layer having a diffusion window; (b) forming an impurity-doped poly-silicon layer on the insulating layer and on that portion of the semiconductor substrate which is exposed through the diffusion window; (c) forming an undoped poly-silicon layer on the impurity-doped poly-silicon layer; (d) thermally oxidizing the substrate with the insulating layer, impurity-doped poly-silicon layer and undoped poly-silicon layer, thus diffusing the impurity from the impurity-doped poly-silicon layer into the semiconductor substrate through the diffusion window and converting the undoped poly-silicon layer to a silicon oxide layer; (e) forming on the silicon oxide layer an oxidation-resisting mask layer in a desired pattern; and (f) thermally oxidizing the substrate with the insulating layer, impurity-doped poly-silicon layer, silicon oxide layer and mask layer, thus converting those portions of the impurity-doped poly-silicon layer which lie beneath those portions of the silicon oxide layer which are exposed through the mask layer to impurity-doped silicon oxide layers, whereby the remaining portions of the impurity-doped poly-silicon layer provide an interconnection electrode layer having a desired pattern.

REFERENCES:
patent: 4074304 (1978-02-01), Shiba
patent: 4124934 (1978-11-01), DeBrebisson
patent: 4143178 (1979-03-01), Harada et al.
Shiba et al., "Rapid and Large Capacity Bipolar Devices", Electronic Materials, Aug. 1978, pp. 119-124.

Affiliated with

Also associated with

Rating

Method of manufacturing a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1724002