Patent
1985-02-27
1990-07-10
Moskowitz, Nelson
357 31, H01L 2714, H01L 3100
Patent
active
049410296
ABSTRACT:
An improved light shield for selectively shielding selected light sensitive elements in a visible sensor semiconductor device from incident light comprising a layer of high resistance semiconductor material carried upon the surface of the semiconductor substrate. The high resistance semiconductor material is selected to have a band gap narrower than the silicon semiconductor material it is shielding in order to substantially absorb light which would otherwise fall upon the shielded photosensitive elements.
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Moskowitz Nelson
Sutcliff W. G.
Westinghouse Electric Corp.
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