Semiconductor devices exhibiting minimum on-resistance

Details Semiconductor devices exhibiting minimum on-resistance Semiconductor devices exhibiting minimum on-resistance

1988-08-26

1990-07-10

Clawson, Jr., Joseph E.

357 238, 357 56, 357 86, 357 58, H01L 2978

Patent

active

049410261

ABSTRACT:
An improved conductivity vertical channel semiconductor device includes an insulated gate electrode disposed adjacent a substantial portion of the voltage supporting region. In response to an appropriate bias, the control electrode couples to the electric field originating on charges within the voltage supporting region to reorient the electric field associated with those charges toward the gate electrode and transverse to the direction of current flow through the device. Improved control of the electric field within the voltage supporting region allows the doping concentration, and hence the conductivity of the channel, to be improved without a concomitant decrease in breakdown voltage. Accordingly, the channel width and cell repeat distance of the improved device can be reduced, allowing for an improved current density to be established throughout an overall device cell structure. The charge control region of the voltage supporting layer exhibits an aspect ratio of 0.5.

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Hu, Chenming, "A Parametric Study of Power MOSFETS", 10th Power Electronics Specialists Conference, Record, held Jan. 18-22, 1979, pp. 385-395.

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