Method for making inversion mode diamond electron source

Details Method for making inversion mode diamond electron source Method for making inversion mode diamond electron source

1995-02-07

1997-05-20

Niebling, John

Semiconductor device manufacturing: process

Electron emitter manufacture

313309, 313311, 313336, 313351, 3151694, 345 75, 257 10, 438105, H01L 21465

Patent

active

056311966

ABSTRACT:
An electron source including selectively impurity doped semiconductor diamond wherein regions of selectively impurity doped regions are inverted with respect to the charge carrier population to provide a conductive path traversed by electrons subsequently emitted into a free-space region from the electron emitter. An inversion mode electron emission device including a selectively impurity doped semiconductor diamond electron emitter, for emitting electrons; a control electrode; and an anode for collecting emitted electrons wherein operation of the device relies on the inducement of an inversion region to facilitate electron transit to an electron emitting surface of the electron emitter.

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patent: 5141460 (1992-08-01), Jaskie et al.
patent: 5191217 (1993-03-01), Kane et al.
patent: 5258685 (1993-11-01), Jaskie et al.
patent: 5289086 (1994-02-01), Kane
Geis et al, "Diamond Cold Cathode", IEEE Elec. Dev. Lett., vol. 12, No. 8, Aug. 1991.

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