Etching a substrate: processes – Nongaseous phase etching of substrate – With measuring – testing – or inspecting
Patent
1998-10-30
2000-11-28
Gulakowski, Randy
Etching a substrate: processes
Nongaseous phase etching of substrate
With measuring, testing, or inspecting
216 84, 438 14, 438 16, B24B 4912, H01L 2100, B44C 122
Patent
active
061531162
ABSTRACT:
A method of monitoring the state of chemical-mechanical polishing that can be applied to the polishing of a metallic layer over a substrate. The method includes performing a series of scanning operations while a wafer is being polished to generate multiple reflectance line spectra in each polishing period. The degree of dispersion of the reflectance spectra is then utilized as a polishing index. In this invention, the standard deviation of the reflectance spectra in each period is used as a monitoring index, and the peak value of the standard deviation is used to determine the polishing end point. Surface uniformity is monitored by using the time interval between two time nodes at half the peak standard deviation values. When the distance of separation between the two time nodes is large, it means that the polished surface is not sufficiently flat.
REFERENCES:
patent: 5413941 (1995-05-01), Koss et al.
patent: 5433651 (1995-07-01), Lustig et al.
patent: 5658423 (1997-08-01), Angell et al.
Huang Cheng-Sung
Shau Feng-Yeu
Yang Ming-Cheng
Yi Champion
Ahmed Shamim
Gulakowski Randy
United Microelectronics Corp.
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