Self-aligned refractory gate process with self-limiting undercut

Details Self-aligned refractory gate process with self-limiting undercut Self-aligned refractory gate process with self-limiting undercut

1987-12-23

1989-07-18

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 41, 437179, 148DIG51, 148DIG131, 156643, H01L 21283

Patent

active

048493767

ABSTRACT:
A process for manufacturing GaAs FET's having refractory metal gates provides for reducing the size of the gate relative to a mask by an etch sequence which results in precisely controlled and repeatable self-limited undercutting of the mask. A reactive ion etch of the refractory metal in a CF.sub.4 O.sub.2 plasma containing an inert gas provides the self-limiting undercut at a pressure in the range of 175-250 mTorr when the power is less than 0.15 W/cm.sup.2. Preceeding the undercut, an anisotropic RIE in a CF.sub.4 plasma can be employed to clear unmasked areas of the refractory metal and an initial sputter cleaning in argon improves the quality of the initial etch.

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Levy, H. M. and R. E. Lee, IEEE Electron Device Letters, vol. EDL-4, No. 4, pr. 1983, pp. 102-104.
Takahashi, S., F. Murai, S. Asai, and H. Kodera, International Electron Devices Meeting, Sec. 1986, pp. 214-217.

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