Method for forming a polycrystalline layer of ultra hard materia

Details Method for forming a polycrystalline layer of ultra hard materia Method for forming a polycrystalline layer of ultra hard materia

1995-12-06

1998-06-16

Mayes, Curtis

Adhesive bonding and miscellaneous chemical manufacture

Methods

Surface bonding and/or assembly therefor

264 15, 264657, 51297, 51307, 419 33, 419 36, 419 43, 419 54, B32B 3126, B22F 100, B22F 314

Patent

active

057663947

ABSTRACT:
A polycrystalline diamond layer is bonded to a cemented metal carbide substrate by this process. A layer of dense high shear compaction material including diamond or cubic boron nitride particles is placed adjacent to a metal carbide substrate. The particles of diamond have become rounded instead of angular due to high shear compaction in a multiple roller process. The volatiles in the high shear compaction material are removed and binder decomposed at high temperature, for example, 950.degree. C., leaving residual amorphous carbon or graphite in a layer of ultra hard material particles on the carbide substrate. The substrate and layer assembly is then subjected to a high pressure, high temperature process, thereby sintering the ultra hard particles to each other to form a polycrystalline ultra hard layer bonded to the metal carbide substrate. The layer of high shear compaction material is also characterized by a particle size distribution including larger and smaller particles that are distributed uniformly throughout the layer.

REFERENCES:
patent: 3574580 (1971-04-01), Stromberg et al.
patent: 3743566 (1973-07-01), Breton et al.
patent: 3778586 (1973-12-01), Breton et al.
patent: 4104441 (1978-08-01), Fedoseev et al.
patent: 4194949 (1980-03-01), Breton et al.
patent: 4861350 (1989-08-01), Phaal et al.
patent: 4866885 (1989-09-01), Dodsworth
patent: 4931068 (1990-06-01), Dismukes et al.
patent: 5037451 (1991-08-01), Burnand et al.
patent: 5089070 (1992-02-01), McAndrew
patent: 5211726 (1993-05-01), Slutz et al.
patent: 5248317 (1993-09-01), Tank et al.
patent: 5320990 (1994-06-01), Guiton et al.
patent: 5366679 (1994-11-01), Streicher
patent: 5379853 (1995-01-01), Lockwood et al.
patent: 5468268 (1995-11-01), Tank et al.
patent: 5620489 (1997-04-01), Tselesin
Ragan Technologies Incorporated, High Shear Compaxtion Technology; 14 pages. Ragan Technologies Inc. Presents: . . . ZST . . . LTCC; 9 pages.
A New Hardfacing Process, Dustoor, et al, Imperial Clevite Inc., 1982 National Power Metallurgy Conference, Montreal, Can. May 24-27 Process in Powder Metallurgy, vol. 38, pp. 1-16.
Air Products and Chemicals, Inc.--QPAC Binders, 12 pages; Laboratory Report, The Role of Slip Additives in Tape-Casting Technology, vol. 71, #10, Oct. 1992.

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