Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Patent
1996-05-10
2000-03-14
Chaudhuri, Olik
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
257637, 257640, H01L 2358
Patent
active
060376511
ABSTRACT:
A semiconductor device with a multi-level insulator formed on a semiconductor substrate is provided, which enables to restraint of impurity atoms doped into a material contacted with the insulator from diffusing into the insulator. The multi-level structured insulator contains a first dielectric film formed on the substrate and a second dielectric film formed on the first dielectric film. The first dielectric film is thicker than the second dielectric film so that an interface of the first and second dielectric films exists at a level higher than the central level of the insulator. The first dielectric film is made of an oxide of a semiconductor constituting the substrate. The second dielectric film is made of a nitride or oxynitride of the semiconductor constituting the substrate. The insulator preferably contains only the first and second dielectric films to have a two-level structure. The insulator may further contain a third dielectric films formed on the second dielectric film, thereby having a three-level structure. The third dielectric film is made of an oxide of the semiconductor constituting the substrate, which preferably has a thickness of 3 nm or less.
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Cao Phat X.
Chaudhuri Olik
NEC Corporation
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