Method of manufacturing a DMOS

Details Method of manufacturing a DMOS Method of manufacturing a DMOS

1987-10-23

1989-07-18

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 38, 437968, 437985, 437978, 437153, 148DIG106, H01L 21316

Patent

active

048493678

ABSTRACT:
A method of manufacturing a DMOS is disclosed. On a polysilicon gate layer, a multiple dielectric mask including studs (71) defines a window (70) for body implantation (80) into a substrate. Unmasked regions of polysilicon and substrate are oxidized to form oxide regions (84,85,88). Subsequent to the removal of the protective studs and a portion of the oxide, remaining oxide regions (90,91,92) act as a mask for source implantation (99,100).

REFERENCES:
patent: 4271583 (1981-06-01), Kauhng et al.
patent: 4417385 (1983-11-01), Temple
patent: 4443931 (1984-04-01), Baliga et al.
patent: 4466176 (1984-08-01), Temple
patent: 4516143 (1985-05-01), Love

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