Semiconductor devices

Details Semiconductor devices Semiconductor devices

1987-12-16

1989-07-18

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 33, 437228, 437233, 148DIG10, 357 34, 357 59, 156653, H01L 21265

Patent

active

048493643

ABSTRACT:
A method of manufacturing a bipolar transistor (1) with semi-self-aligned p.sup.+ base contacts (27,27a). A p-type base region (28) is formed in a surface region of an n-type region 5 comprising a collector. An element (29) of, for example, n.sup.+ doped polycrystalline silicon, and comprising an emitter, is formed on the surface in contact with the base region (28). The base contacts (27,27a) are formed by implantation and using the element (29) as a mask. An n.sup.+ collector contact (25) is made to the n-tpe region (5).

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