Solid-state imaging device using high relative dielectric consta

Details Solid-state imaging device using high relative dielectric consta Solid-state imaging device using high relative dielectric consta

1992-05-05

1994-04-26

Mancuso, Joseph

Television

Camera, system and detail

Solid-state image sensor

257233, 257295, 257292, 257310, 257443, 348308, 348300, H04N 5335

Patent

active

053071697

ABSTRACT:
A solid-state imaging device comprises a semiconductor substrate, a plurality of pixels formed on the semiconductor substrate and generating imaging signals, and an output amplifier converting a pixel signal generated from the pixel to an imaging signal, and outputting the image signal. The pixel includes a photoelectric converting portion generating a charge in accordance with the amount of received light, a capacitor storing a charge generated from the photoelectric converting portion, and a switching portion for reading out the charge stored in the capacitor as the pixel signal. The capacitor includes a storing region formed on at least one of a part or an adjacent portion of the photoelectric converting portion, a capacitor insulating film formed on the storing region, the capacitor insulating film being made of a high dielectric material having a high relative dielectric constant, and a capacitor electrode formed on the capacitor insulating film.

REFERENCES:
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patent: 4860076 (1989-08-01), Tabei et al.
patent: 4878120 (1989-10-01), Matsumoto et al.
patent: 4926247 (1990-05-01), Nagasaki et al.
patent: 4951105 (1990-08-01), Yamada
patent: 4977090 (1990-12-01), Shimada et al.
patent: 5124777 (1992-06-01), Lee
IEEE Transactions on Electron Devices, vol. 37, No. 10, Oct. 1990; pp. 2201-2206; "Ferroelectric Liquid-Crystal Shutter Array with a-Si:H TFT Driver"; Okumura et al.
Electronics, Sep. 1989; pp. 61-63; "Technology The Wild Card"; B. Cole.

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