Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Substrate dicing
Patent
1996-12-06
1999-06-22
Bowers, Charles
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Substrate dicing
438 26, 438113, H01L 21302
Patent
active
059151633
ABSTRACT:
Method of manufacturing a laser which is provided with a metal layer and a solder layer as early as in the wafer stage, and which is particularly suitable for so-called epi-down final mounting. An individual laser is obtained in that first a block comprising a row of lasers is formed from the wafer by cleaving, and subsequently the individual lasers are separated from the block. Strip-shaped openings are formed in the metal layer at the areas of end faces to be formed before the block is formed, and subsequently a score is provided in the surface of the semiconductor body in each opening in the longitudinal direction thereof, whereupon the solder layer is provided over the metal layer and over at least part of the openings therein, and the block is subsequently formed through cleaving at the areas of and in the direction of the scores.
REFERENCES:
patent: 4380862 (1983-04-01), Nyul
patent: 5418190 (1995-05-01), Cholewa et al.
patent: 5460318 (1995-10-01), Boudreau et al.
"A Reliable Die Attach Method for High Power Semiconductor Lasers and Optical Amplifiers", by S.A. Merritt et al, 1995 Proc. of 45th Elec. Components & Technology Conf., May 21-24, 1995, pp. 428-430.
Noordermeer Arjan
Schmidt Marco
Bowers Charles
Christianson Keith
Glenn Michael A.
Uniphase OPto Holdings, Incorporated
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