Electrode assembly for a semiconductor device

Details Electrode assembly for a semiconductor device Electrode assembly for a semiconductor device

1992-12-22

1994-04-26

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257751, 257754, 257741, 252521, 252509, 252513, 252519, H01L 2348, H01L 2946, H01L 2954, H01L 2962

Patent

active

053069501

ABSTRACT:
An electrode assembly for a semiconductor device includes a contact layer formed on a semiconductor substrate and consisting mainly of a rare-earth metal or metals, or a silicide thereof, or a mixture thereof, and a diffusion barrier layer formed on the contact layer and consisting mainly of iron or an iron alloy. The assembly is bonded to a mount by a solder layer formed on the diffusion barrier layer and consisting mainly of lead and tin.

REFERENCES:
patent: 3766445 (1973-10-01), Reuter et al.
patent: 4394673 (1983-07-01), Thompson et al.
patent: 4480261 (1984-10-01), Hattori et al.
patent: 4534099 (1985-08-01), Howe
patent: 4668374 (1987-05-01), Bhagat et al.
patent: 4847675 (1989-07-01), Eng
patent: 4965656 (1990-10-01), Koubuchi et al.
Baglin, et al., Appl. Phys. Lett., vol. 36, No. 7, Apr. 1980, pp. 594-596. "The formation of silicides from thin films of some rare-earth metals".
Tu, et al., Appl. Phys. Lett., vol. 38, No. 8, Apr. 1981, pp. 626-628. "Low Schottky barrier of rare-earth silicide on n-Si".

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