MOS controlled thyristor

Details MOS controlled thyristor MOS controlled thyristor

1991-12-13

1994-04-26

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

With extended latchup current level

257139, 257138, 257143, 257149, H01L 2974, H01L 31111

Patent

active

053069293

ABSTRACT:
An MCT (MOS controlled thyristor) including a first outer layer of a first conductivity type whose surface contacts a first major electrode, and a second outer layer at which an MOS structure is disposed, and whose surface contacts a second major electrode. The MCT is provided with a second conductivity type region formed in the first outer layer in such a manner that it contacts the first major electrode, but does not contact an inner layer adjacent to the first layer. The MCT has a low on-resistance, a small turn-off loss, and can prevent a negative resistance phenomenon from occurring.

REFERENCES:
patent: 4611128 (1986-09-01), Patalong
patent: 4841345 (1989-06-01), Majumdar
patent: 4961099 (1990-10-01), Roggwiller
patent: 5132767 (1992-07-01), Ogura et al.
"MOS Controlled Thyristors (MCT's)", Temple, General Electric Company, Corporate Research and Development Center, Schenectady, N.Y. IEDM 84 (1984), pp. 282-285.

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