Semiconductor device with strained-layer superlattice

Details Semiconductor device with strained-layer superlattice Semiconductor device with strained-layer superlattice

1993-03-05

1994-04-26

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 15, 257 17, 257185, 257190, 257191, 372 43, H01L 2712, H01L 29161, H01L 3300

Patent

active

053069242

ABSTRACT:
A semiconductor device with a strained-layer superlattice is disclosed, in which a first semiconductor and a second semiconductor of a lattice constant smaller than that of the first semiconductor are stacked on a clad layer of a lattice constant substantially intermediate between those of the first and second semiconductors to form the strained-layer superlattice. The lattice constant of the strained-layer superlattice in the direction of its plane in the free space is nearly equal to the lattice constant of the clad layer. A third semiconductor of a lattice constant substantially equal to that of the clad layer is laminated between the first and second semiconductors stacked one on the other.

REFERENCES:
patent: 5048036 (1991-09-01), Scifres et al.
patent: 5060030 (1991-10-01), Hoke
patent: 5061970 (1991-10-01), Goronkin
patent: 5075743 (1991-12-01), Behfar-Rad
patent: 5090790 (1992-02-01), Zucker
patent: 5181086 (1993-01-01), Yoshida
Fritz et al, "Critical Layer Thickness in In.sub.0.02 Ga.sub.0.8 As/GaAs Single Strained Quantum Well Structure," Appl. Phys. Lett., vol. 51, No. 13, Sep. 28, 1987. pp. 1004-1006.

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