Optoelectric device with a very low series resistance

Details Optoelectric device with a very low series resistance Optoelectric device with a very low series resistance

1992-11-23

1994-04-26

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

372 45, 372 46, 257101, H01L 29161

Patent

active

053069234

ABSTRACT:
An optoelectronic device with a very low series resistance has a III-V substrate, a lower, n-doped III-V material semiconducting confinement layer placed on the substrate, an active zone having at least one active, not intentionally doped III-V material semiconducting layer placed on the lower confinement layer, an upper, p-doped III-V material semiconducting confinement layer covering said active zone, the forbidden energy band of the active layer being lower than that of the confinement layers. Two metal coatings are placed on two opposite faces of the device and there is a highly n-doped, quaternary III-V material semiconducting layer for stopping the diffusion of doping ions from the upper confinement layer and placed between the active layer and the upper confinement layer, said stopping layer having a thickness smaller than that of the active layer and also forming part of the active zone.

REFERENCES:
patent: 4371967 (1983-02-01), Wada et al.
patent: 4479222 (1984-10-01), Hawrylo
patent: 5177757 (1993-01-01), Tsugami
patent: 5189680 (1993-02-01), Kimura
patent: 5212705 (1993-05-01), Kahan et al.
patent: 5214663 (1993-05-01), Kakimoto et al.
IEEE Journal of Quantum Electronics, vol. 27, No. 6, Jun. 1991 pp. 1794-1797-C. Kazmierski et al.
Japanese Journal of Applied Physics, vol. 25, No. 8, Aug. 1986 pp. 1169-1173-K. Kazmierski et al.

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