MR Device with anti-ferro magnetic field anti-parallel to sense

Dynamic magnetic information storage or retrieval – Head – Hall effect

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G11B 539

Patent

active

059148390

ABSTRACT:
A magneto-resistance effect device having improved sensitivity in which an effective anisotropic magnetic field operating on a magneto-resistance effect layer is not increased by the sense current magnetic field. The device includes a magnetic field detection unit having a magneto-resistance effect film exhibiting a magneto-resistance effect. The magnetic field detection unit is fed with a sense current in a direction substantially parallel to an external magnetic field. The device also includes an anti-ferromagnetic film arranged neighboring to the magneto-resistance effect film of the magnetic field detection unit. The direction of a magnetic field emanating from the anti-ferromagnetic film is substantially anti-parallel to the direction of a sense current magnetic field generated by the sense current and impressed on the magneto-resistance effect film of the magnetic field detection unit.

REFERENCES:
patent: 5696656 (1997-12-01), Gill et al.
patent: 5725963 (1998-03-01), Iwasaki et al.
patent: 5748399 (1998-05-01), Gill
patent: 5768066 (1998-06-01), Akiyama et al.
patent: 5768071 (1998-06-01), Lin
patent: 5780176 (1998-07-01), Iwasaki et al.

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