Method for reducing on resistance and improving current characte

Details Method for reducing on resistance and improving current characte Method for reducing on resistance and improving current characte

1993-04-12

1994-04-26

Quach, T. N.

Fishing, trapping, and vermin destroying

437 41, 437 40, 437 43, 437 59, 148DIG126, H01L 21336

Patent

active

053066561

ABSTRACT:
Construction and operation method for lightly doped drain MOSFET that has low or minimum drift on-state resistance and maintains high voltage blocking in the off-state. Temperature sensitivity of the electrical properties of the MOSFET are also reduced relative to MOSFETs produced by processes such as SIPOS. Voltage level shifting of p-channel and n-channel MOSFETs, produced according to the invention, relative to another voltage level is easily accomplished.

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