Method of making thin film transistors

Fishing – trapping – and vermin destroying

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437229, 437913, 148DIG64, 148DIG105, 148DIG137, H01L 21265

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active

053066537

ABSTRACT:
A method of making a thin film transistor exhibiting a high channel conductance includes the steps of forming, on an insulating transparent substrate, a gate electrode, an insulating layer, a semiconductor layer, a photoresist, in this order and performing a back substrate exposure at the insulating transparent substrate using the gate electrode as a photo mask, to form a photoresist pattern. The photoresist pattern is then baked to make it flow outward to a desired bottom width. The semiconductor layer is etched using the photoresist pattern as an etch mask to form a semiconductor layer pattern. On the resultant entire exposed surface are formed an ohm contact layer and a metal layer. The metal layer is then subjected to photoing and etching processes, to remove its portion disposed above the semiconductor pattern and its opposite side edge portions, thereby forming a metal layer pattern for source and drain electrodes. Using the metal layer pattern as an etch mask, the semiconductor layer is etched to form a through hole on the semiconductor layer pattern. On the resultant entire exposed surface, an insulation layer for a passivation is formed.

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patent: 4968638 (1990-11-01), Wright et al.
patent: 5071779 (1991-12-01), Tanaka et al.
patent: 5091337 (1992-02-01), Watanabe et al.
patent: 5130263 (1992-07-01), Possin et al.
patent: 5137841 (1992-08-01), Takeda et al.

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