Static information storage and retrieval – Floating gate – Particular biasing
Patent
1996-08-26
1998-11-24
Clawson, Jr., Joseph E.
Static information storage and retrieval
Floating gate
Particular biasing
36518503, 36518911, 327170, 327437, G11C 1606
Patent
active
058416986
ABSTRACT:
A semiconductor device includes a nonvolatile memory cell and a current detecting type sense amplifier for detecting a current flowing through a data line into the memory cell. The semiconductor device is further provided with an element for outputting a first voltage detecting signal when a detected supply voltage exceeds a set value and outputting a second voltage detecting signal when the detected supply voltage does not exceed the set value. The sense amplifier includes an element for switching a dependent characteristic of a level sensing current upon the supply voltage to be higher in response to the second voltage detecting signal that in response to the first voltage detecting signal. Thus, error reading of a data from the memory cell, which can be otherwise caused under application of a low supply voltage, can be avoided.
REFERENCES:
patent: 4989184 (1991-01-01), Kishida
patent: 5111432 (1992-05-01), Miyaoka
Hirano Hiroshige
Honda Toshiyuki
Clawson Jr. Joseph E.
Matsushita Electric Inudustrial Co., Ltd.
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