Deep diode devices

Details Deep diode devices Deep diode devices

1977-10-28

1979-06-05

Wojciechowicz, Edward J.

357 45, 357 55, 357 88, 357 89, 357 90, H01L 2904

Patent

active

041575644

ABSTRACT:
Deep diodes which extend in straight lines through a silicon wafer are produced by migrating aluminum droplets through the wafer while maintaining a finite temperature gradient through the wafer in the direction of straight line droplet travel, and at the same time maintaining a zero temperature gradient through the wafer in a direction normal to the droplet travel course. Unidirectional heat flow apparatus implementing this method is also disclosed.

REFERENCES:
patent: 2813048 (1957-11-01), Pfann

Affiliated with

Also associated with

Rating

Deep diode devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Deep diode devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Deep diode devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1710203