Method of forming wiring of semiconductor device

Details Method of forming wiring of semiconductor device Method of forming wiring of semiconductor device

1991-07-10

1994-02-22

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437192, 437194, 437195, 437228, 427596, H01L 21268

Patent

active

052886646

ABSTRACT:
A method of forming a wiring (a multilayer interconnection) of a semiconductor device, comprising the steps of: forming a first conductor film on a first insulating film formed on a semiconductor substrate; forming a second insulating film having a via-hole on the first conductor film and first insulating film; depositing a second conductor film over the second insulating film and the via-hole; selectively etching the second conductor film to form a groove which surrounds the via-hole at a predetermined distance from the via-hole; irradiating the whole surface with a laser beam to melt and make the portion of the second conductor film from the edge of the via-hole to the groove flow into the via-hole, so that a conductor plug is formed within the via-hole; and forming a third conductor film in contact with the conductor plug. The other portion of the second conductor film prevents the laser beam from penetrating the first conductor film. The plug formation process is applied during a formation of other wiring (an electrode coming into contact with a doped region in a semiconductor substrate).

REFERENCES:
patent: 4758533 (1988-07-01), Magee et al.
patent: 4800179 (1989-01-01), Mukai
patent: 4920070 (1990-04-01), Mukai
patent: 5070038 (1991-12-01), Jin
patent: 5087589 (1992-02-01), Chapman et al.
patent: 5110759 (1992-05-01), Mukai
Moriya et al. "A Planar Metalization Process-Its Application to Tri-Level Aluminum Interconnection" Toshiba Research and Development Center, IEDM, pp. 550-553, 1988.

Affiliated with

Also associated with

Rating

Method of forming wiring of semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming wiring of semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming wiring of semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-170828