Method for manufacturing a single electron component

Details Method for manufacturing a single electron component Method for manufacturing a single electron component

1995-03-13

1997-03-18

Bowers, Jr., Charles L.

Fishing, trapping, and vermin destroying

437110, 437 41, 257 28, H01L 21335

Patent

active

056122330

ABSTRACT:
In a method for manufacturing a single electron component in MOS technique, an active zone provided with a gate dielectric is defined in a silicon substrate. With assistance of a fine-structuring method, particularly with electron beam lithography, a first gate level is generated with fine structures <100 nm, the surface and sidewalls thereof being covered with an insulating layer. A second gate level is generated, this second gate level covering the fine structures of the first gate level at least in the region of the active zone.

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