Method of fabricating semiconductor devices and the devices

Details Method of fabricating semiconductor devices and the devices Method of fabricating semiconductor devices and the devices

1996-03-29

1997-03-18

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437 24, 437100, 437176, 437904, H01L 21265, H01L 2120, H01L 2144

Patent

active

056122322

ABSTRACT:
A method of fabricating a semiconductor device including forming a Schottky contact on the surface of a substrate by patterning a layer of nickel to define a contact and annealing the nickel below approximately 600.degree. C. A trench is etched around the Schottky contact utilizing the Schottky contact as an etch mask and inert ions are implanted in the trench to form a damage region. The trench is passivated with a dielectric layer. An ohmic contact can be formed on the reverse side of the substrate prior to formation of the Schottky contact.

REFERENCES:
patent: 3982262 (1976-09-01), Karatsjuba et al.
patent: 5323040 (1994-06-01), Baliga
patent: 5506421 (1996-04-01), Palmour

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