Method of making CMOS with organic and inorganic semiconducting

Details Method of making CMOS with organic and inorganic semiconducting Method of making CMOS with organic and inorganic semiconducting

1996-04-24

1997-03-18

Niebling, John

Fishing, trapping, and vermin destroying

437 34, 437 57, 257 40, H01L 2184, H01L 5140

Patent

active

056122284

ABSTRACT:
A method of fabricating a thin film transistor device including forming first and second spaced apart control electrodes on a surface of a supporting substrate and forming a dielectric layer over the control electrodes. Inorganic and organic thin film transistors are formed on the dielectric layer, one on each control electrode. The inorganic and organic thin film transistors are n-type and p-type conductivity, respectively, and may be integrated into a complementary circuit. Also, the thin film transistor device is fabricated at relatively low temperatures so that plastic supporting substrates can be utilized.

REFERENCES:
patent: 5107308 (1992-04-01), Koezuka et al.
patent: 5347144 (1994-09-01), Garnier et al.
patent: 5500537 (1996-03-01), Tsumura et al.
patent: 5543631 (1996-08-01), Weinberger
Hamann et al., "Electrical Properties of Organic/Inorganic Thin Film Sandwiches", Thin Solid Films, 36 No. 1, pp. 81-84 Jul. 15, 1976.

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