Method of making a semiconductor memory device having a double-s

Details Method of making a semiconductor memory device having a double-s Method of making a semiconductor memory device having a double-s

1992-05-22

1993-12-14

Thomas, Tom

Fishing, trapping, and vermin destroying

437 47, 437 60, 437919, H01L 2170

Patent

active

052702383

ABSTRACT:
A semiconductor memory device having a double-stacked capacitor, and methods for manufacturing the same, in which the memory device has a first stacked capacitor and a second stacked capacitor, which are formed respectively over and below a bit line and run in parallel and are connected in order to increase the capacity of the capacitors and to prevent contact faults caused by a step occurring.

REFERENCES:
patent: 4961165 (1990-10-01), Ema
patent: 5006481 (1991-04-01), Chan et al.
patent: 5116776 (1992-05-01), Chan et al.
patent: 5162249 (1992-11-01), Kim
patent: 5166090 (1992-11-01), Kim et al.

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