Patent
1989-11-17
1991-12-03
Mintel, William
357 16, 357 55, 357 30, H01L 2712
Patent
active
050703757
ABSTRACT:
The present invention teaches a semiconductor having a quantum box structure, where the quantum box structure consists of quantum boxes and barriers and arranged in adjacent positions. By combining the quantum boxes with the barriers, electrons are confined by a quantum within the quantum effects box structure, and an electron state having a miniband with finite width and gap with finite width is generated so that the electrons can move between quantum box structures by a tunnel effect. It is characterized in that the width of the miniband is smaller than the intrinsic energy of a phonon, that the gap between the miniband generated from the lower energy level and the miniband generated from the next lowest energy level is bigger than said intrinsic energy, and that most of the electrons are in the miniband state generated from the lowest energy level. This makes it possible to suppress the lattice vibration by confining the electrons within the quantum boxes while enabling electric conduction and to improve the dependency of electron mobility on temperature in the semiconductor.
REFERENCES:
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Mintel William
Research Development Corporation of Japan
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