Punchthrough resetting JFET image sensor

Details Punchthrough resetting JFET image sensor Punchthrough resetting JFET image sensor

1974-05-30

1976-06-15

Edlow, Martin H.

357 22, H01L 2714, H01L 3100, H01L 2980

Patent

active

039640833

ABSTRACT:
A solid-state picture pick-up device according to the invention comprises a number of field effect transistors in which the channel region is bounded by two oppositely located gate electrodes each forming a rectifying junction with the channel region and in which the photosensitive junction is formed by a gate electrode which shows a floating potential. Said gate electrode may be charged by simultaneously applying to the other gate electrode a voltage pulse of a sufficiently large amplitude so that punch-through occurs between the gate electrodes.
Since in this manner each transistor may be adjusted at its own threshold voltage, the influence of the spreading in the threshold voltages on the output signals is considerably reduced.

REFERENCES:
patent: 3453507 (1969-07-01), Archer
patent: 3721839 (1973-03-01), Shannon
patent: 3887936 (1975-06-01), Shannon
patent: 3893151 (1975-07-01), Bosseloar
patent: 3894295 (1975-08-01), Shannon

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