Process for preparing a bismuth-type superconducting thin film

Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k

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505730, 505731, 505732, 505742, 505782, 427 62, 20419224, C23C 1434, H01L 3924

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050513982

ABSTRACT:
In a process for depositing a superconducting thin film of bismuth-containing compound oxide on a substrate by physical vapor deposition, the improvement wherein the substrate is heated at a temperature between 670.degree. and 750.degree. C. during the deposition.

REFERENCES:
patent: 4866032 (1989-09-01), Fujimori et al.
patent: 4996190 (1991-02-01), Higaaki et al.
A. B. Harker, et al., Appl. Phys. Lett., 52(25), pp. 2186-2187, Jun. 20, 1988.
C. E. Rice et al., Appl. Phys. Lett., 52(21), pp. 1828-1830, May 23, 1988.
Brian T. Sullivan et al., Appl. Phys. Lett., 52, (23), pp. 1992-1994, Jun. 6, 1988.

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