Semiconductor integrated circuit device

Details Semiconductor integrated circuit device Semiconductor integrated circuit device

1978-08-10

1980-11-11

Edlow, Martin H.

357 23, 357 41, 357 48, 357 51, 357 52, 357 43, H01L 2980, H01L 2978

Patent

active

042336155

ABSTRACT:
An IC device comprising a junction type field effect transistor of a back gate type and a bipolar device such as a bipolar transistor and a resistor made of impurity diffused region, wherein an extremely thin (in the order of 0.05-0.2 .mu.m) impurity doped surface region of a conductivity type same as that of a back gate region is formed at the surface of a surface channel region, and is separated from at least a drain region to sustain high breakdown voltage between gate region and the drain region; the impurity surface region serving to reduce noise and also enabling to achieve satisfactory characteristics of J-FET and also good ohmic characteristics of the resistor.

REFERENCES:
patent: 3725136 (1973-04-01), Morgan
patent: 4032962 (1977-06-01), Balyoz
patent: 4095252 (1978-06-01), Ochi

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