MIS type FET semiconductor device with gate insulating layer hav

Details MIS type FET semiconductor device with gate insulating layer hav MIS type FET semiconductor device with gate insulating layer hav

1991-03-29

1992-07-28

Mintel, William

357 233, 357 238, 357 41, 357 54, 357 52, H01L 2978

Patent

active

051344521

ABSTRACT:
The MIS transistor according to the present invention includes insulating layers formed by the CVD method as gate insulating layers. The gate insulating layers formed by the CVD method have a uniform film thickness on the channel region surface roughened by etching treatment or the like. Thus, dielectric breakdown strength of the gate insulating layer is assured.

REFERENCES:
patent: 3899373 (1975-08-01), Antipov
patent: 4758530 (1988-07-01), Schubet
patent: 4791074 (1988-12-01), Tsunashima et al.
patent: 4843023 (1989-06-01), Chiu et al.
patent: 4855247 (1989-08-01), Ma et al.
patent: 4954867 (1990-09-01), Hosaka
patent: 5021851 (1991-06-01), Haken et al.
Huang et al., "A MOS Transistor with Self-Aligned Polysilcon Source-Drain", IEEE Electron Device Letters, vol. 7, No. 5, May 1986, pp. 314-316.

Affiliated with

Also associated with

Rating

MIS type FET semiconductor device with gate insulating layer hav does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with MIS type FET semiconductor device with gate insulating layer hav, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MIS type FET semiconductor device with gate insulating layer hav will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1689858