Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Patent
1998-05-11
2000-03-14
Kunemund, Robert
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
438906, 438959, 216 94, 347224, H01L 21302
Patent
active
060372591
ABSTRACT:
After identifying characters are written on the wafer surface 16 as a pattern of small holes 19 formed with a laser in the wafer I.D. stage of a semiconductor manufacturing process, the wafer surface in the region of the I.D. is polished to break loose deposits of silicon 20 that are left on the wafer surface and the region is then washed. The process prevents semiconductor material deposited on the wafer surface during the laser operation from later breaking off as hard particles that can scratch the surface of the wafer.
REFERENCES:
patent: 5175425 (1992-12-01), Spratte et al.
patent: 5289661 (1994-03-01), Jones et al.
patent: 5501909 (1996-03-01), Higaki et al.
patent: 5628870 (1997-05-01), Ye et al.
patent: 5643053 (1997-07-01), Shendon
patent: 5688360 (1997-11-01), Jarath
patent: 5825789 (1998-10-01), Watanabe et al.
patent: 5877064 (1999-03-01), Chang et al.
Lin Bih-Tiao
Yang Fu-Liang
Ackerman Stephen B.
Champagne Donald L.
Kunemund Robert
Robertson William S.
Saile George O.
LandOfFree
Method for forming identifying characters on a silicon wafer does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for forming identifying characters on a silicon wafer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming identifying characters on a silicon wafer will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-168896