Method of forming shallow trench isolation with dummy pattern in

Details Method of forming shallow trench isolation with dummy pattern in Method of forming shallow trench isolation with dummy pattern in

1997-10-28

1999-06-08

Dang, Trung

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438427, 438692, 148DIG50, H01L 2176

Patent

active

059111100

ABSTRACT:
A thin silicon dioxide layer and a silicon nitride layer are respectively formed on a wafer. A plurality of shallow trenches are formed in the wafer. A trench filling layer is successively refilled into the trenches for isolation. A reverse tone mask with a dummy pattern mask is patterned on top of the trench filling material. An etching is performed to etch the trench filling material using the reverse tone mask and the dummy pattern mask as etching masks. The reverse tone mask and the dummy pattern mask are then stripped away. A chemical mechanical polishing (CMP) technology is used to remove the trench filling layer to the surface of the silicon nitride layer for planarization.

REFERENCES:
patent: 5459096 (1995-10-01), Venkatesan et al.
patent: 5578519 (1996-11-01), Cho
patent: 5811345 (1998-09-01), Yu et al.

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