Method of fabricating a semiconductor device including a protect

Details Method of fabricating a semiconductor device including a protect Method of fabricating a semiconductor device including a protect

1991-01-17

1992-07-28

Quach, T. N.

Fishing, trapping, and vermin destroying

437194, 437236, 148DIG15, 148285, 156643, H01L 21283

Patent

active

051340933

ABSTRACT:
A method of fabricating a semiconductor device is disclosed, which can prevent disconnection failures due to corrosion of aluminum-base alloy lines in the semiconductor device. First, an aluminum-base alloy film containing at least one kind of alloying element other than aluminum is formed on an insulating film which covers a semiconductor substrate. Before the surface of the aluminum-base alloy film is cleaned with fuming nitric acid, the surface treatment of the aluminum-base alloy film is performed using a plasma of an oxygen-base gas, to cover fully the surface of the aluminum-base alloy film with passivation film. Next, the given portions of the aluminum-base alloy film are selectively etched to form a line pattern. The surface treatment of the line pattern is performed using a plasma of an oxygen-base gas to cover fully the sides of the line pattern with passive film, before the surface of the line pattern is cleaned with fuming nitric acid.

REFERENCES:
patent: 3585461 (1971-06-01), Eynon et al.
patent: 4089709 (1978-05-01), Harris
patent: 4351696 (1982-09-01), Radigan
patent: 4412885 (1983-11-01), Wang et al.
patent: 4561168 (1985-12-01), Pitzer et al.
patent: 4592800 (1986-06-01), Landau et al.
patent: 4997746 (1991-03-01), Greco et al.
Sze, S. M., VLSI Technology, 1983, McGraw-Hill, pp. 380-381.

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