Method of fabricating a narrow base-width bipolar device and the

Details Method of fabricating a narrow base-width bipolar device and the Method of fabricating a narrow base-width bipolar device and the

1978-06-12

1980-04-29

Ozaki, G.

Metal treatment

Stock

Ferrous

29571, 29578, 148 15, 148187, 357 44, 357 46, H01L 21223, H01L 2126, H01L 2972

Patent

active

042008786

ABSTRACT:
The basewidth of a lateral, bipolar transistor is markedly reduced by first forming a layer of polycrystalline silicon over an oxide coated substrate. By utilizing a process for doping the exposed edges of the patterned polysilicon layer, a narrower basewidth dimension is achieved than heretofore possible with photolithographic techniques.

REFERENCES:
patent: 3445734 (1969-05-01), Pecoraro et al.
patent: 3663869 (1972-05-01), Strull
patent: 3731164 (1973-05-01), Cheney
patent: 3738880 (1973-06-01), Laker
patent: 3846821 (1974-11-01), Nagata et al.
patent: 4069495 (1978-01-01), Masuoka
patent: 4124933 (1978-11-01), Nicholas
Electronics, Feb. 21, 1974, pp. 91-96.
Electronics, Oct. 3, 1974, pp. 111-118.
Solid State Technology, Jun., 1977, pp. 42-48.

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