Group III nitride compound semiconductor light emitting device h

Details Group III nitride compound semiconductor light emitting device h Group III nitride compound semiconductor light emitting device h

1997-08-21

2000-02-08

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

257 96, 257103, 257 99, H01L 3300

Patent

active

060230762

ABSTRACT:
A double-hetero structure light emitting diode using group III nitride compound semiconductor is disclosed- The diode has a first electrode connected to a first semiconductor layer and a second electrode connected to a second semiconductor layer. In one aspect of the invention, the first electrode is also connected to the second semiconductor layer. In another aspect of the invention, a resistance is disposed between the first electrode and the second semiconductor layer. In another aspect of the invention, a diode in a reverse direction and in parallel to the light emitting diode is disposed between the first and second electrodes.

REFERENCES:
patent: 5369289 (1994-11-01), Tamaki et al.
patent: 5652438 (1997-07-01), Sassa et al.
Nakamura, S., Senoh, M. and Mukai, T.; P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes; Jpn. J. Appl. Phys. vol. 32, L8 (1993), pp. L8-L11.

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