Semiconductor laser device having an inn contact layer and a met

Details Semiconductor laser device having an inn contact layer and a met Semiconductor laser device having an inn contact layer and a met

1997-02-20

1999-11-30

Bovernick, Rodney

Coherent light generators

Particular active media

Semiconductor

372 43, H01S 319

Patent

active

059955279

ABSTRACT:
A semiconductor laser device including Ga.sub.x Al.sub.y In.sub.1-x-y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1)) layers has an InN contact layer, which has a thickness ranging, preferably, from 0.1 .mu.m to 1.0 .mu.m inclusive. The contact layer is formed by a MOCVD method. When materials for formation of the InN contact layer are fed into a reactor, an organic radical material is also fed and a substrate temperature is controlled to be about 800.degree. C. during the process of growth of the InN layer.

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